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and Topography Development During Bombardment of Silicon

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// Silicon carbide formation by annealing C60 films on silicon ARTICLE in JOURNAL OF APPLIED PHYSICS · APRIL 1997

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Formation of β-SiC by C60Deposition on Silicon | MRS

Low Temperature Formation of β-SiC by C60Deposition on Silicon - Volume 359 - S. Henke, B. Rauschenbach, B. Stritzker Reaction between

Gas phase study of silicon–C60 complexes: Surface coating

(C60)nSim+ cationic clusters are produced in a laser vaporization source by quenching the vapors from two independent C60 and silicon targets. They are

C60 drop-deposited on the silvered porous silicon - IOP

use this site you agree to our use of cookiesC60 drop-deposited on the silvered porous silicon Panarin A Yu and Terekhov S N 2016 Nanoscale

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【LRC】Silicon carbide formation by annealing C60 films on silicon

Silicon carbide formation by annealing C60 films on silicon L. Moro,a) Aterning SiC by using the different reactivities of C60 toward Si and SiO2

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silicon dioxide and tin dioxide modified by fullerenol C60

Study of porous sol-gel nanocomposites based on silicon dioxide and tin It was shown that introducing fullerenol C60(OH) n (n = 22-24) at

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2010315-C60 films inside vertical 7 nm silicon nanogap silicon; hence, the often troublesome and Organic Electronics 2015 24, 37-42 Ultra-

Fluence Effects in C60 Cluster Bombardment of Silicon - The

2009128-(37), 8081-8087 [ACS Full Text ] [PDF (Lu, N. Winograd Surface and Interface Analysis Effects in C60 Cluster Bombardment of Silicon†

Formation of β-SiC by C60Deposition on Silicon | MRS

Low Temperature Formation of β-SiC by C60Deposition on Silicon - Volume 359 - S. Henke, B. Rauschenbach, B. Stritzker Reaction between

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C - Fluence Effects in C60 Cluster Bombardment of Silicon

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Behavior of Silicon and Germanium Clusters on a C60 Fullerene

2002412- Behavior of silicon (Si) and germanium (Ge) C60 fullerene has been revealed by using time-ofC60- at n, m = 3, 4, whereas the spectra

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